sidc56 d17 0 e6 edited by infin e on technologies, aim pmd d cid cls, l425 1n, edition 1.2, 28 .0 7 . 2008 fast switching diode chip in emitter controlled - technology this chip is used for: power modules and discrete devices features : 17 00v technology, emitter controlled soft, fast switching low reverse recovery charge small temperature coefficient applications: smps, resonant applications, drives a c chip type v r i f die size package sidc56 d17 0 e6 17 00v 75 a 7.5 x 7.5mm 2 sawn on foil mechanical p arameter raster size 7.5 x 7.5 area total 56.25 anode pad size 5.4 8 x 5.48 mm 2 thickness 200 m wafer size 150 mm max. possible chips per wafer 247 passivation frontside p hotoimide pad metal 3200 nm al si cu backside metal ni ag ? system suitable for epoxy and soft solder die bonding die bond e lectrically conductive gl ue or solder wire bond al, 500m reject ink d ot s ize ? 0.65mm; max 1.2mm recommended s torage e nvironment s tore in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c
sidc56 d17 0 e6 edited by infin e on technologies, aim pmd d cid cls, l425 1n, edition 1.2, 28 .0 7 . 2008 maximum r atings parameter symbo l condition value unit repetitive peak reverse voltage v rrm t v j = 25 c 1 7 00 v continuous forward current i f t vj < 150c 1 ) maximum repetitive forward current i frm t vj < 150c 1 5 0 a j unction temperature range t vj - 40 ...+175 c o perating junction t emperature t vj - 40 ...+1 5 0 c dynamic ruggedness2 ) p max i f max = 1 5 0a, v r max = 1700v t vj 150c tbd kw 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation static c haracteristic (tes ted on wafer ) , t v j = 25 c value parameter symbol conditions min. t yp. max. unit reverse leakage current i r v r =17 00v 2 7 a cathode - anode breakdown voltage v b r i r =5 ma 1 7 00 v diode forward voltage v f i f = 75 a 2.15 v further electrical c harac teristic switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
sidc56 d17 0 e6 edited by infin e on technologies, aim pmd d cid cls, l425 1n, edition 1.2, 28 .0 7 . 2008 chip d rawing a: anode pad a
sidc56 d17 0 e6 edited by infin e on technologies, aim pmd d cid cls, l425 1n, edition 1.2, 28 .0 7 . 2008 descriptio n aql 0. 65 for visual inspection according to failure catalog ue electrostatic discharge sensitive device according to mil - std 883 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. l egal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for furt her information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life - support devices or systems only with the express written approval of infineon tec hnologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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